Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching

Silicon carbide (SiC) is a wide bandgap third-generation semiconductor well suited for harsh environment power electronics, micro and nano electromechanical systems, emerging quantum technology by serving as hosts states via defect centers. The chemical inertness of SiC limits viable etching techniques to plasma-based reactive ion methods; however, these could have significant undesirable effects electronic photonic devices. This paper presents plasma-free, open-circuit, photo-induced metal-assisted etch fabricating nanoscale features without the inherent high energy ion-related surface damage. method presented herein utilizes above ultraviolet light, patterned noble metal (Pt), solution consisting an oxidant potassium persulfate (K2S2O8) acid, hydrofluoric spatially define morphology. parameter space comprehensively explored demonstrate controllability versatility this technique produce ordered arrays structures with porous or solid sidewalls, elucidate mechanism.